Œ€‹†ƒƒ“ƒo[



Ξ‹΄ W (Ishibashi, Akira)
Professor

Room No. 03-101 (3ŠK)
i-akira es.hokudai.ac.jp
TEL@ 011-706-9423
FAX@ 011-706-9427

1981”N “Œ‹ž‘εŠw—Šw•¨—Šw‰Θ‘²‹Ζ
1982-1983”N •Δ‘ Lawrence Berkeley National Lab., Research Assistant
1983”N “Œ‹ž‘εŠw—ŠwŒn‘εŠw‰@CŽm‰Ϋ’φC—Ήi•¨—Šwj
1983-2002”N ƒ\ƒj[(Š”)’†‰›Œ€‹†Š
1990-1991”N University of Illinois at Urbana-Champaign, Dept. of Phys., John Bardeen Chair Visiting Faculty
1998”N “Œ–k‘εŠw ŠwΫ‰ΘŠwŒ€‹†ƒZƒ“ƒ^[‹qˆυ‹³Žφ
2003”N –kŠC“Ή‘εŠw “dŽq‰ΘŠwŒ€‹†Š ‹³Žφ

@EŒ€‹†“ΰ—e [1] [2] [3] [4] [5]

@EŒ€‹†‹ΖΡ
@@>>˜_•Ά [1] [2] [3]
@@>>“Α‹– [1] [2] [3] [4] [5] [6] [7] [8]

@E2008Šξ‘b•¨—Šw‚P
@EKeywords
@@ŽŸŒ³«(ƒwƒeƒ\‘’)§ŒδAƒiƒm\‘’‚Ζƒ}ƒNƒ\‘’‚̐ڑ±
@@ƒ{ƒgƒ€ƒAƒbƒvŒn‚Ζƒgƒbƒvƒ_ƒEƒ“Œn‚Μ“‡E—Z‡



Žε—v˜_•Ά
1)Peter Blood, Akira Ishibashi, and Marek Osinski, eds., "Physics and Simulation of Optoelectronic Devices VII", ISBN 0-8194-3095-1, SPIE publishing, Berlingham, USA, 1999
2)Marek Osinski, Soo Jin Chua, and Akira Ishibashi, eds., "Design@Fabrication, and Characterization of Photonic Devices II", ISBN 0-8194-4324-7, SPIE publishing, Berlingham, USA 2001
3)A. Ishibashi, M. Itabashi, Y. Mori, and N. Watanabe, Phys. Rev. B33 pp. 2887-2889 (1986)
4)A. Ishibashi, D.G. Ravenhall, R.L. Schult, and H. W. Wyld, J. Appl. Phys. 73 pp. 2364- 2375(1993)
5)N. Nakayama, S. Ito, T. Ohata, K. Nakano, H. Okuyama, M. Ozawa, A. Ishibashi, M. Ikeda, and Y. Mori, Electron. Lett. 29 1488-1489 (1993)
6)A. Ishibashi, S. Tomiya, and M. Ukita, Int. Conf. Phys. Semicon. (ICPS), Berlin, 1996, p. 3155
7)E. Kato, H. Noguchi, M. Nagai, H. Okuyama, S. Kijima, and A. Ishibashi, Electron. Lett. 34 282-284 (1998)
8)R. Ugajin, A. Ishibashi, S. Hirata, C. Ishimoto, and Y.Mori, Physics Lett. A 275 467-472 (2000)
9)M. Ukita and A. Ishibashi, J. Nanostructure Physics 37 pp. 919-922 (2001)
10)A. Ishibashi and K. Kondo, Electron. Lett., 40 pp. 1268-1269 (2004)
11)A. Ishibashi, K. Kaiju, Y. Yamagata, and N. Kawaguchi, Electron. Lett., 41 pp. 1268-1269(2005)
12)H. Kaiju, N. Kawaguchi, and A. Ishibashi, Rev. Sci. Instrum., 76 pp. 085111-085113(2005)
13)N. Kawaguchi, M. D. Rahaman, H. Kaiju and A. Ishibashi, Jpn. J. Appl. Phys., 45 pp. 6481-6483 (2006)
14)K. Kondo and A. Ishibashi, Jpn. J. Appl. Phys., 45 pp. 9137-9139 (2006)
15)H. Kaiju, K. Kondo, and A. Ishibashi, Mater. Res. Soc. Symp. Proc., 961 pp. O5.5.1 - O5.5.6 (2007)
16)M. D. Rahaman, K. Gomita, N. Kawaguchi, H. Kaiju, K. Kondo, and A. Ishibashi, Electron. Lett., 43 pp. 1356-1357 (2007)
17)H. Kaiju, A. Ono, N. Kawaguchi, and A. Ishibashi: Jpn. J. Appl. Phys., 47 pp. 244-248(2008)
18)H. Kaiju, A. Ono, and A. Ishibashi: J. Vac. Soc. Jpn., 51, pp. 211-213(2008).
19)H. Kaiju, A. Ono, N. Kawaguchi, and A. Ishibashi: J. Appl. Phys. 103, pp. 07B5231-07B5233 (2008).


[TOP]

[Šέ’n]
–kŠC“Ή‘εŠw“dŽq‰ΘŠwŒ€‹†Š
ƒiƒm\‘’•¨«Œ€‹†•ͺ–μ
§001-0020 ŽD–yŽs–k‹ζ–k20πΌ10’š–Ϊ